NDLI: High quality ZnO:Al thin films deposited by using initial sputtering condition

Content Provider	Springer Nature Link
Author	Kim, Deok Kyu Kim, Hong Bae
Copyright Year	2012
Abstract	High quality ZnO:Al (AZO) thin films sputtered at room temperature were deposited under a various initial pressures and its properties were investigated. With decreasing initial pressures, the crystallinity and sheet resistance of AZO thin films were improved and decreased, respectively. According to the composition results with the initial pressure, the low initial pressure promoted stoichiometric composition and increased Al composition in AZO thin films, resulting in improvement of crystallinity and increase of carrier concentration. These phenomena were attributed to reduction of residual gases with decreasing initial pressure. All samples exhibited highly transparent over 80 % at visible wavelength range (400–800 nm). In AZO thin films deposited at room temperature, the initial pressure is known to be a critical factor to obtain a high-quality thin film.
Starting Page	113
Ending Page	117
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	24
Issue Number	1
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2012-10-23
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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