NDLI: Investigation of physical properties and impedance spectroscopy study of Cu$_{3}$SbS$

Content Provider	Springer Nature Link
Author	Nefzi, K. Rabhi, A. Kanzari, M.
Copyright Year	2015
Abstract	Cu$_{3}$SbS$_{3}$ ingot material was successfully grown by direct melting of the constituent elements taken in stoichiometry compositions using high-purity copper, antimony and sulfide elements. Cu$_{3}$SbS$_{3}$ thin films were prepared by single source vacuum thermal evaporation method under vacuum (10$^{−5}$ Torr) onto no heated glass substrates. The X-ray diffraction experimental data revealed that the Cu$_{3}$SbS$_{3}$ powder exhibiting an orthorhombic structure and lattice parameters a, b and c were calculated. It has been shown that the as-deposited Cu$_{3}$SbS$_{3}$ thin films were overall amorphous and the film thicknesses were around 400 nm. The absorption spectra of the films showed that the Cu$_{3}$SbS$_{3}$ compound is a direct band gap material and the gap value is closed to 1.46 eV. The as-deposited Cu$_{3}$SbS$_{3}$ films show absorption coefficients of about 2 × 10$^{5}$ cm$^{−1}$ near the absorption edge. The as-deposited Cu$_{3}$SbS$_{3}$ films exhibit p-conductivity type by using hot probe method. A Schottky diode (Al/p-Cu$_{3}$SbS$_{3}$/Mo) was fabricated by simple deposition of pure Aluminum on the front side of the Cu$_{3}$SbS$_{3}$ thin film. I–V characteristics show that the Al makes Schottky contact with p-Cu$_{3}$SbS$_{3}$. Impedance spectroscopy technique was used to evaluate the conduction processes of the samples as a function of temperature (598–673 K) in the range 1 Hz–13 MHz. We found a decrease with temperature of the entire serial resistance R$_{s}$, the parallel resistance R$_{p}$ and the capacitance C$_{p}$. In effort to modeling these results an equivalent electrical circuit was used. From the Arrhenius diagram, we estimated activation energy at 0.16 eV which represents the energy difference between the trap level and the valence band.
Starting Page	1888
Ending Page	1896
Page Count	9
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	27
Issue Number	2
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2015-10-31
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Investigation of structural, optical and electrical properties of Cu doped β-In$_{2}$S$_{3}$ thin films

Structural and optical properties of Cu$_{2}$SnS$_{3}$ and Cu$_{3}$SnS$_{4}$ thin films by successive ionic layer adsorption and reaction

Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films

Some physical properties of CuInSe$_{2}$ thin films

Properties of nano-thick BaSnO$_{3}$/Cu/BaSnO$_{3}$ multilayer thin films: the role of substrate temperature

Superconducting properties enhancement of YBa$_{2}$Cu$_{3}$O$_{7−δ}$ thin films by BaSnO$_{3}$ doping

Optical investigation of PbTe:Gd thin films

Investigation into the growth and electromechanical properties of Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ thin films

Electrical characterization of SnSb$_{4}$S$_{7}$ thin films by impedance spectroscopy

Investigation of physical properties and impedance spectroscopy study of Cu$_{3}$SbS$_{3}$ thin films

Similar Documents

Investigation of structural, optical and electrical properties of Cu doped β-In$_{2}$S$_{3}$ thin films

Structural and optical properties of Cu$_{2}$SnS$_{3}$ and Cu$_{3}$SnS$_{4}$ thin films by successive ionic layer adsorption and reaction

Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films

Some physical properties of CuInSe$_{2}$ thin films

Properties of nano-thick BaSnO$_{3}$/Cu/BaSnO$_{3}$ multilayer thin films: the role of substrate temperature

Superconducting properties enhancement of YBa$_{2}$Cu$_{3}$O$_{7−δ}$ thin films by BaSnO$_{3}$ doping

Optical investigation of PbTe:Gd thin films

Investigation into the growth and electromechanical properties of Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ thin films

Electrical characterization of SnSb$_{4}$S$_{7}$ thin films by impedance spectroscopy

Investigation of physical properties and impedance spectroscopy study of Cu$_{3}$SbS$_{3}$ thin films