NDLI: Influence of buffer surface preparation on the quality of Al$_{ x }$Ga$_{1-x }$As/GaAs quantum wells studied by optical orientation experiments

Content Provider	Springer Nature Link
Author	Mejía García, C. Winter, A. López López, M. Gilinsky, A. Pascher, H.
Copyright Year	2007
Abstract	Quantum well (QW) structures of Al$_{ x }$Ga$_{1-x }$As/GaAs with x = 0.3 were characterized by photoluminescence spectroscopy (PL) with circularly polarized excitation at a temperature of 1.6 K. The samples contained three QWs with thickness of 7, 5, and 3 nm grown by molecular beam epitaxy (MBE) on a 500 nm thick buffer layer. Four samples with identical geometry but different surface treatments (in-situ etching the GaAs buffer with Cl$_{2}$ at different temperatures, and air-exposed buffer, respectively) were compared. The degree of circular polarization of the PL and its decrease in a magnetic field applied perpendicularly to the direction of propagation of light (Hanle effect) allows the determination of the interband lifetime τ and the spin lifetime τ $_{ s }$ of the electrons. These lifetimes were different in the different QWs and strongly depend on the growth procedure.
Starting Page	1157
Ending Page	1161
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	18
Issue Number	11
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-03-28
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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