NDLI: Annealing behavior of TiO$_{2}$-sheathed Ga$_{2}$O$

Content Provider	Springer Nature Link
Author	Jin, Changhyun Kim, Hyunsoo Baek, Kyungjoon Kim, Hyoun Woo Lee, Chongmu
Copyright Year	2009
Abstract	TiO$_{2}$-sheathed Ga$_{2}$O$_{3}$ one-dimensional (1D) nanostructures were synthesized by thermal evaporation of GaN powders and then sputter-deposition of TiO$_{2}$. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the Ga$_{2}$O$_{3}$ cores are of a single crystal nature with a monoclinic structure while the TiO$_{2}$ shells are amorphous. Photoluminescence (PL) emission is slightly decreased in intensity by TiO$_{2}$ coating, but it is significantly increased by thermal annealing in an oxygen atmosphere. The emission peak is also shifted from ~500 to ~550 nm by oxygen annealing. The increase in the green emission is due to the increase in the concentration of the Ga vacancies in the cores by the inflow of oxygen during oxygen annealing. On the other hand, annealing in a nitrogen atmosphere leads to a red shift of the emission to ~700 nm originating from nitrogen doping.
Starting Page	1154
Ending Page	1158
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	21
Issue Number	11
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2009-12-04
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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