NDLI: Electrical characteristics of Cu-PS-Si structures

Content Provider	Springer Nature Link
Author	Dzhafarov, T. D. Omur, B. Can Oruc, C. Allahverdiev, Z. A.
Copyright Year	2003
Abstract	The effect of ambient humidity on the current-voltage characteristics of Cu-PS (porous silicon) structure was investigated. The humidity-voltaic effect, i.e. the generation of open-circuit voltage (V $_{oc}$) in Cu-PS interface in humid atmosphere (up to 300 mV at 95% relative humidity) in dark and day-light illumination is discovered. Humidity-stimulated open-circuit voltage generation is caused by hydrogen component of water-vapor of ambient. The possible mechanism of hydrogen-stimulated voltage generation in Cu-PS interface is suggested. Besides this effect, annealing in the range of 60–200°C in air on V $_{oc}$ of Cu-PS structures was studied and decrease of values of V $_{oc}$ depending on duration of annealing was discovered. These changes were attributed to diffusion of oxygen from air and oxidation of copper film. (V $_{oc}$ − t) data were used for estimation of diffusion coefficients of oxygen in Cu film. The temperature dependence of the oxygen diffusion coefficient in Cu films are described by the relation D = 5.2 × 10$^{−7}$ exp(-0.44/kT). The results of this research showed that Cu-PS structures can be perspective for using as hydrogen sensors.
Starting Page	917
Ending Page	920
Page Count	4
File Format	PDF
ISSN	00222461
Journal	Journal of Materials Science
Volume Number	38
Issue Number	5
e-ISSN	15734803
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2003-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Polymer Sciences Industrial Chemistry/Chemical Engineering Characterization and Evaluation Materials Mechanics
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Mechanics of Materials Mechanical Engineering Polymers and Plastics

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