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| Content Provider | Springer Nature Link |
|---|---|
| Author | Velişa, Gihan Trocellier, Patrick Thomé, Lionel Vaubaillon, Sylvain Sattonnay, Gaël Miro, Sandrine Serruys, Yves |
| Copyright Year | 2014 |
| Abstract | β–SiC nanoprecipitates can be patterned in crystalline silicon with an almost monomodal size distribution by simultaneous-dual-beam of C$^{+}$ and Si$^{+}$ ion implantations at 550 °C. Their shape appears as spherical (average diameter ~4–5 nm) ,and they are in epitaxial relationship with the crystalline silicon matrix. The narrow size distribution follows the left wing of the carbon distribution where the nuclear ion stopping, and thus the point defect generation rate is largest. This observation allows us to conclude that the induced damage act as sinks for C atoms leading to the SiC nanoprecipitates formation centered at the maximum of the simulated damage distribution. The nuclear reaction analysis, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy techniques were used to characterize the samples. |
| Starting Page | 4899 |
| Ending Page | 4904 |
| Page Count | 6 |
| File Format | |
| ISSN | 00222461 |
| Journal | Journal of Materials Science |
| Volume Number | 49 |
| Issue Number | 14 |
| e-ISSN | 15734803 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2014-04-01 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Materials Science Characterization and Evaluation of Materials Polymer Sciences Continuum Mechanics and Mechanics of Materials Crystallography Mechanics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Ceramics and Composites Mechanics of Materials Mechanical Engineering Polymers and Plastics |
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