NDLI: Effect of heat treatment of sputter deposited ZnO films co-doped with H and Al

Content Provider	Springer Nature Link
Author	Lee, S. H. Lee, T. S. Lee, K. S. Cheong, B. Kim, Y. D. Kim, W. M.
Copyright Year	2008
Abstract	ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing Al$_{2}$O$_{3}$ dcontent of 1 (HA$_{1}$ZO series) and 2 wt.% (HA$_{2}$ZO series) on Corning glass (Eagle 2000) at substrate temperature of 150 °C with Ar and H$_{2}$/Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with different Al contents on the electrical, optical and structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. For the as-deposited films, the free carrier number in both series of HAZO films increased with increasing H$_{2}$ content in sputter gas. HA$_{2}$ZO film series prepared from target containing 2 wt.% Al$_{2}$O$_{3}$ showed better crystallinity and higher carrier concentration than HA$_{1}$ZO film series deposited using target containing 1 wt.% Al$_{2}$O$_{3}$. The crystallinity and the Hall mobility of HA$_{2}$ZO film series decreased with increasing H$_{2}$ content in sputter gas, while those of HA$_{1}$ZO film series showed a reversed behavior. Although HA$_{2}$ZO film series yielded lower resistivity than HA$_{1}$ZO film series due to higher carrier concentrations, the higher figure of merit (expressed as 1 / ρα, where ρ and α represents the resistivity and absorption coefficient, respectively) was observed for HA$_{1}$ZO film series because of substantially low absorption loss in these films. When annealed in air ambient, HA$_{1}$ZO film series showed much stronger stability than HA$_{2}$ZO film series. Vacuum-annealing resulted in drop of the carrier concentrations as well as large shrinkage in lattice constant, which indicated that the hydrogen dopants are in relatively volatile state and can be removed easily from the films upon annealing.
Starting Page	468
Ending Page	473
Page Count	6
File Format	PDF
ISSN	13853449
Journal	Journal of Electroceramics
Volume Number	23
Issue Number	2-4
e-ISSN	15738663
Language	English
Publisher	Springer US
Publisher Date	2008-04-26
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Hydrogen doping ZnO Transparent conducting oxide Magnetron sputtering Annealing Crystallography Electrochemistry Characterization and Evaluation of Materials Ceramics, Glass, Composites, Natural Methods Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Materials Chemistry Mechanics of Materials Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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