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| Content Provider | Springer Nature Link |
|---|---|
| Author | Ansell, Troy Y. Cann, David P. |
| Copyright Year | 2013 |
| Abstract | The ternary perovskite xPbTiO$_{3}$ - (1−x)[BiScO$_{3}$ + Bi(Ni$_{1/2}$Ti$_{1/2}$)O$_{3}$] (PT-BS-BNiT), where x = 0.54 is the morphotropic phase boundary composition, was studied for high temperature ferroelectric applications. Polycrystalline ceramics were prepared using the standard solid-state methods. The stoichiometric ceramic was found to have room temperature dielectric permittivity and loss values at 1 kHz of 1490 and 0.049 respectively. Piezoelectric properties, of the stoichiometric composition, measured included: P$_{r}$ = 31.0 μC/cm$^{2}$, E$_{c}$ = 25.0 kV/cm, d$_{33}$ = 340 pC/N, d$_{33}$ $^{*}$ = 896 pm/V, and a bipolar electromechanical strain of 0.25 %. From these data, the Curie temperature was T$_{C}$ = 370 °C and the depoling temperature was T$_{D}$ = 325 °C. Processing ceramics with excess bismuth improved the low field piezoelectric coefficients with a maximum of d33 = 445 pC/N, while increasing the lead content increased the transition temperatures. The depoling and Curie temperatures of all compositions were measured to be between 275 and 400 °C. |
| Starting Page | 159 |
| Ending Page | 167 |
| Page Count | 9 |
| File Format | |
| ISSN | 13853449 |
| Journal | Journal of Electroceramics |
| Volume Number | 31 |
| Issue Number | 1-2 |
| e-ISSN | 15738663 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2013-06-29 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Piezoelectric Ferroelectric Perovskite Lead Ternary Optical and Electronic Materials Ceramics, Glass, Composites, Natural Methods Characterization and Evaluation of Materials Electrochemistry Crystallography |
| Content Type | Text |
| Resource Type | Article |
| Subject | Ceramics and Composites Materials Chemistry Mechanics of Materials Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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