NDLI: Monolayer-Mediated Patterning of Integrated Electroceramics

Content Provider	Springer Nature Link
Author	Payne, David A. Clem, Paul G.
Copyright Year	1999
Abstract	Integrated electroceramic thin-film devices on semiconducting or insulating substrate materials offer a wide variety of attractive attributes, including high capacitance density, nonvolatile memory, sensor/actuator ability, and other unique electrical, electromechanical, magnetic and optical functions. Thus the ability to pattern such electroceramic thin films is a critical technology for future device realization. Patterned oxide thin-film devices are typically formed by uniform film deposition followed by somewhat complicated post-deposition ion-beam or chemical etching in a controlled environment i.e., a subtractive method. We review here an upset technology, a different way of patterning, by an additive approach, which allows for the selective deposition of electroceramic thin layers without such post-deposition etching. In this method, substrate surfaces are selectively functionalized with hydrophobic self-assembled monolayers to modify the adhesion of subsequently deposited solution-derived electroceramics. The selective functionalization is achieved through microcontact printing (μ-CP) of self-assembled monolayers of the chemical octadecyltrichlorosilane on substrates of current technical interest. Subsequent sol-gel deposition of ceramic oxides on these functionalized substrates, followed by lift-off from the monolayer, yields high quality, patterned oxide thin layers only on the unfunctionalized regions. A variety of micron-scale dielectric oxide devices have been fabricated by this method, with lateral resolution as fine as 0.5 μm. In this paper, we review the monolayer patterning and electrical behavior of several patterned electroceramic thin films, including Pb(Zr,Ti)O$_{3}$ [PZT], LiNbO$_{3}$, and Ta$_{2}$O$_{5}$. A multilevel example is also given which combines selective MOCVD deposition of metal electrodes and sol-gel patterned PZT for Pt//PZT//Pt//Si(100) ferroelectric memory cells.
Starting Page	163
Ending Page	172
Page Count	10
File Format	PDF
ISSN	13853449
Journal	Journal of Electroceramics
Volume Number	3
Issue Number	2
e-ISSN	15738663
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	1999-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Polymer Sciences Optical and Electronic Materials Characterization and Evaluation Materials Ceramics, Glass, Composites, Natural Methods Crystallography
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Materials Chemistry Mechanics of Materials Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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