NDLI: Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriers

Content Provider	Springer Nature Link
Author	Singh, Sumitra Utpalla, Pranav Pal, Suchandan Dhanavantri, Chenna
Copyright Year	2016
Abstract	The performance of InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-well barriers formed from alternating p- and undoped regions is compared with that of reference devices having similar epilayer structure but with barriers formed from alternating n- and undoped regions. Simulations verify that p-type step-doping in the quantum barriers is more effective in reducing the polarization-induced electric field and lowering the energy barrier for hole transport as well as increasing the barrier height of the conduction band to confine electrons, thereby enhancing the radiative recombination rate compared with n-type step doping in the quantum barriers. This profile also increments hole injection and provides a more uniform carrier distribution across the multiple quantum wells. According to the simulation results, when using the alternating stepwise doping profile in the barrier regions in the proposed structure, the internal quantum efficiency is remarkably improved, offering dual advantages of a homogeneous hole distribution due to the undoped region and a reduced valence-band barrier height due to the p-doping.
Starting Page	1040
Ending Page	1045
Page Count	6
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	15
Issue Number	3
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2016-06-13
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	InGaN/GaN Internal quantum efficiency (IQE) Light-emitting diodes (LEDs) Multiple quantum well (MQW) Step-doped barrier ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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