NDLI: Mathematical simulation for estimating the potential of the hydrogen-terminated diamond FET in the mm-wave range

Content Provider	Springer Nature Link
Author	Garber, Gennadiy Z.
Copyright Year	2015
Abstract	The estimation is based on the intrinsic transistor large-signal lumped-element equivalent circuit with the parameters and spline characteristics calculated by means of a two-dimensional model of the transistor active region. This model includes the quasi-hydrodynamic model of hole transport (with very low mobility on the surface), equations of the electric field, and dipole model of the hydrogen-terminated diamond surface. The object of simulation is the structure of a real 100-nm-long gate single-crystal diamond transistor, which is recovered by fitting the simulated output current–voltage characteristics to the experimental. Using the frequency-domain simulation of a power amplifier with such a transistor, a number of RF parameters (power-added efficiency, output power, and others) are calculated as functions of the maximum available power of the RF generator at frequencies of 30 and 60 GHz.
Starting Page	181
Ending Page	190
Page Count	10
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	15
Issue Number	1
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2015-10-06
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	C–H surface dipole Energy balance equation Equivalent circuit Frequency-domain simulation Hydrogen-terminated diamond Quasi-hydrodynamic model ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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