NDLI: Joule heating and phonon transport in silicon MOSFETs

Content Provider	Springer Nature Link
Author	Aksamija, Zlatan Ravaioli, Umberto
Copyright Year	2006
Abstract	This work examines the generation of heat in silicon MOSFETs using self-consistent Monte Carlo device simulation with full electron bandstructure and a full phonon dispersion computed from the Adiabatic Bond Charge model. We devise an efficient algorithm for the inclusion of full phonon dispersion in order to account for anisotropy and details of heat transport with great accuracy. We compute the density-of-states (DOS) and the lattice thermal energy numerically and use them to generate maps of local temperatures in a representative small-channel MOSFET device. Our results show that most heat is dissipated in the form of optical g-type phonons in a small region in the drain, and that the heat flows in a preferred direction aligned with the flow of the electron current. We also show that the distribution of generated phonons in energy closely follows the phonon DOS.
Starting Page	431
Ending Page	434
Page Count	4
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	5
Issue Number	4
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2007-01-18
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Monte Carlo Phonon transport Joule heating Anisotropic phonon dispersion Mechanical Engineering ApplicationMathematics/Computational Methods of Engineering Mathematical and Computational Physics Optical and Electronic Materials Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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