NDLI: Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals

Content Provider	Springer Nature Link
Author	Komarov, F. F. Romav, I. A. Vlasukova, L. A. Milchanin, O. V. Parkhomenko, I. N. Kovaleva, T. B. Korolik, O. V. Mudryi, A. V. Wendler, E.
Copyright Year	2017
Abstract	Transmission electron microscopy (TEM), Raman scattering (RS), and photoluminescence (PL) techniques are used to study the structure, phase composition, and radiative properties of silicon with implanted InSb nanocrystals produced by implanting Sb$^{+}$ and In$^{+}$ ions with energies of 350 keV and fluences of 3.5·1016 cm$^{–2}$ followed by heat treatment at 1100$^{°}$C for 3, 10, and 60 min. The TEM and RS data confirm the formation of InSb nanocrystals with sizes ranging from 2 to 50 nm in the implanted and annealed samples. A broad band in the 0.8–1.05 eV range is detected in low-temperature (4.2 K) PL spectra of the annealed samples. The possible mechanisms for the luminescence in this range are luminescence of InSb nanocrystals and radiative recombination between the conduction band of silicon and an In acceptor.
Starting Page	959
Ending Page	964
Page Count	6
File Format	PDF
ISSN	00219037
Journal	Journal of Applied Spectroscopy
Volume Number	83
Issue Number	6
e-ISSN	15738647
Language	English
Publisher	Springer US
Publisher Date	2017-01-26
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	crystalline silicon ion implantation InSb nanocrystals photoluminescence structure Atomic/Molecular Structure and Spectra Analytical Chemistry
Content Type	Text
Resource Type	Article
Subject	Spectroscopy Condensed Matter Physics

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