NDLI: Effect of Low-Temperature Diffusion Annealing on the Properties of PbSnTe〈In〉 Epilayers

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Effect of Low-Temperature Diffusion Annealing on the Properties of PbSnTe〈In〉 Epilayers

Content Provider	Springer Nature Link
Author	Vasil'eva, L. F. Klimov, A. E. Petikov, N. I. Shumskii, V. N.
Copyright Year	2001
Abstract	A procedure was proposed for low-temperature vapor-phase In doping of Pb$_{1 – x }$Sn$_{ x }$Te films grown by molecular-beam epitaxy on BaF$_{2}$ substrates. Diffusion annealing was carried out in a hydrogen atmosphere in the presence of a vapor source identical in composition to the film and a dopant source at temperatures which were, in most cases, no higher than the growth temperature (300–460°C). The effect of diffusion annealing on the composition, transport properties, and homogeneity of both undoped and In doped films was examined. The results suggest that indium is transported in the vapor phase in the form of indium tellurides resulting from the reaction between Te vapor and liquid In.
Starting Page	144
Ending Page	148
Page Count	5
File Format	PDF
ISSN	00201685
Journal	Inorganic Materials
Volume Number	37
Issue Number	2
e-ISSN	16083172
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2001-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Inorganic Chemistry Industrial Chemistry/Chemical Engineering
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Metals and Alloys Chemical Engineering Inorganic Chemistry

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