NDLI: Determining the thermal generation rate of minority charge carriers at semiconductor-ultrathin oxide interfaces

Content Provider	Springer Nature Link
Author	Goldman, E. I. Kukharskaya, N. F. Naryshkina, V. G. Chucheva, G. V.
Copyright Year	2011
Abstract	A simple proximate method for determining the generation rate G $_{ s }$ of electron-hole pairs in metal-ultrathin oxide-semiconductor (MOS) structures is proposed. This method is based on measurements of dynamic current-voltage characteristics of MOS structures in the region of deep depletion of the semiconductor surface and on the comparison of these data to a quasi-equilibrium volt-farad characteristic (VFC) of an ideal MOS structure. This approach to determining G $_{ s }$ from the value of the structure capacitance is insensitive either to a shift of the VPC, which is caused by the presence of built-in charges, or a recharge of localized electron states in the oxide and at the Si-SiO$_{2}$ interface. The proposed technique also allows one to take the influence of a tunneling current through an insulator on the measurement results into account. The algorithm was tested in studies of generation and annihilation processes of centers of generation of electron-hole pairs in n-Si-based MOS structures with an ultrathin (≅4 nm) oxide.
Starting Page	823
Ending Page	827
Page Count	5
File Format	PDF
ISSN	00204412
Journal	Instruments and Experimental Techniques
Volume Number	54
Issue Number	6
e-ISSN	16083180
Language	English
Publisher	SP MAIK Nauka/Interperiodica
Publisher Date	2011-11-20
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Physical Chemistry Measurement Science and Instrumentation Electrical Engineering
Content Type	Text
Resource Type	Article
Subject	Instrumentation

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