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Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K

Content Provider	Springer Nature Link
Author	Watanabe, Hiromichi Yamada, Naofumi Okaji, Masahiro
Copyright Year	2004
Abstract	As a part of the program to establish a thermal expansion standard, the linear thermal expansion coefficients of single-crystal silicon have been determined in the temperature range 293 to 1000 K using a dilatometer which consists of a heterodyne laser Michelson interferometer and gold versus platinum thermocouple. The relative standard deviation of the measured values from those calculated from the best least-squares fit was 0.21%. The relative expanded uncertainty in the measurement was estimated to be 1.1 to 1.5% in the temperature range, based upon an analysis of thirteen standard uncertainties. The present data are compared with the data previously obtained by similar dilatometers and the standard reference data for the thermal expansion coefficient of silicon, recommended by the Committee on Data for Science and Technology (CODATA). The present data are in good agreement with the most recently reported data but not with the earlier high-temperature data used to evaluate the standard reference data, which suggests a need for the reevaluation of the standard reference data for the thermal expansion coefficient of silicon at temperatures above 600 K.
Starting Page	221
Ending Page	236
Page Count	16
File Format	PDF
ISSN	0195928X
Journal	International Journal of Thermophysics
Volume Number	25
Issue Number	1
e-ISSN	15729567
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2004-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Physical Chemistry Industrial Chemistry/Chemical Engineering Mechanics Condensed Matter
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics

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