NDLI: Thermal Conductivity and Interfacial Thermal Resistance: Measurements of Thermally Oxidized SiO$_{2}$ Films on a Silicon Wafer Using a Thermo-Reflectance Technique

Content Provider	Springer Nature Link
Author	Kato, Ryozo Hatta, Ichiro
Copyright Year	2008
Abstract	This article describes the development of a method to measure the normal-to-plane thermal conductivity of a very thin electrically insulating film on a substrate. In this method, a metal film, which is deposited on the thin insulating films, is Joule heated periodically, and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the metal/film/substrate system was solved analytically, and a simple approximate equation was derived. The thermal conductivities of the thermally oxidized SiO$_{2}$ films obtained in this study agreed with those of VAMAS TWA23 within ± 4%. In this study, an attempt was made to estimate the interfacial thermal resistance between the thermally oxidized SiO$_{2}$ film and the silicon wafer. The difference between the apparent thermal resistances of the thermally oxidized SiO$_{2}$ film with the gold film deposited by two different methods was examined. It was concluded that rf-sputtering produces a significant thermal resistance ((20 ± 4.5) × 10$^{−9}$ m$^{2}$·K·W$^{−1}$) between the gold film and the thermally oxidized SiO$_{2}$ film, but evaporation provides no significant interfacial thermal resistance (less than ± 4.5 × 10$^{−9}$ m$^{2}$·K·W$^{−1}$). The apparent interfacial thermal resistances between the thermally oxidized SiO$_{2}$ film and the silicon wafer were found to scatter significantly (± 9 × 10$^{−9}$ m$^{2}$·K·W$^{−1}$) around a very small thermal resistance (less than ± 4.5 × 10$^{−9}$ m$^{2}$·K·W$^{−1}$).
Starting Page	2062
Ending Page	2071
Page Count	10
File Format	PDF
ISSN	0195928X
Journal	International Journal of Thermophysics
Volume Number	29
Issue Number	6
e-ISSN	15729567
Language	English
Publisher	Springer US
Publisher Date	2008-11-15
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Interfacial thermal resistance Periodic method Thermal conductivity Thermally oxidized SiO$_{2}$ film Thermo-reflectance Physical Chemistry Mechanics Condensed Matter Industrial Chemistry/Chemical Engineering
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics

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