NDLI: A D-band Active Imager in a SiGe HBT Technology

Content Provider	Springer Nature Link
Author	Yoon, Daekeun Song, Kiryong Kim, Jungsoo Kaynak, Mehmet Tillack, Bernd Rieh, Jae Sung
Copyright Year	2015
Abstract	In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz$^{1/2}$. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz$^{1/2}$ were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm$^{2}$ including the antenna and bonding pads, images of various objects were successfully acquired.
Starting Page	335
Ending Page	349
Page Count	15
File Format	PDF
ISSN	18666892
Journal	International Journal of Infrared and Millimeter Waves
Volume Number	36
Issue Number	4
e-ISSN	18666906
Language	English
Publisher	Springer US
Publisher Date	2015-01-13
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	heterodyne bipolar transistors bipolar integrated circuit imaging Electrical Engineering Electronics and Microelectronics, Instrumentation Optics and Electrodynamics
Content Type	Text
Resource Type	Article
Subject	Instrumentation Condensed Matter Physics Electrical and Electronic Engineering Radiation

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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