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  1. International Journal of Infrared and Millimeter Waves
  2. International Journal of Infrared and Millimeter Waves : Volume 34
  3. International Journal of Infrared and Millimeter Waves : Volume 34, Issue 12, December 2013
  4. Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD
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International Journal of Infrared and Millimeter Waves : Volume 38
International Journal of Infrared and Millimeter Waves : Volume 37
International Journal of Infrared and Millimeter Waves : Volume 36
International Journal of Infrared and Millimeter Waves : Volume 35
International Journal of Infrared and Millimeter Waves : Volume 34
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 12, December 2013
Observation of forward propagating THz mode emitted from a two-color laser-induced air plasma
High Efficient, Intense and Compact Pulsed D$_{2}$O Terahertz Laser Pumped With a TEA CO$_{2}$ Laser
An Ultrahigh-order-mode, Higher-harmonic Coaxial Gyrotron Oscillator in Sub-terahertz Wave Range
Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD
Short-slot Hybrid Coupler Using Linear Taper in W-band
Waveguide Bandpass Filters for Millimeter-Wave Radiometers
THz Gyrotron and BWO Designed for Operation in DNP-NMR Spectrometer Magnet
WR-2.8 Band Micromachined Rectangular Waveguide Filter
A Short Distance CW-Radar Sensor at 77 GHz in LTCC for Industrial Applications
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 11, November 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 10, October 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 9, September 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 7-8, August 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 5-6, June 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 3-4, April 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 2, February 2013
International Journal of Infrared and Millimeter Waves : Volume 34, Issue 1, January 2013
International Journal of Infrared and Millimeter Waves : Volume 33
International Journal of Infrared and Millimeter Waves : Volume 32
International Journal of Infrared and Millimeter Waves : Volume 31
International Journal of Infrared and Millimeter Waves : Volume 30
International Journal of Infrared and Millimeter Waves : Volume 29
International Journal of Infrared and Millimeter Waves : Volume 28
International Journal of Infrared and Millimeter Waves : Volume 27
International Journal of Infrared and Millimeter Waves : Volume 26
International Journal of Infrared and Millimeter Waves : Volume 25
International Journal of Infrared and Millimeter Waves : Volume 24
International Journal of Infrared and Millimeter Waves : Volume 23
International Journal of Infrared and Millimeter Waves : Volume 22
International Journal of Infrared and Millimeter Waves : Volume 21
International Journal of Infrared and Millimeter Waves : Volume 20
International Journal of Infrared and Millimeter Waves : Volume 19
International Journal of Infrared and Millimeter Waves : Volume 18

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Uncooled THz/sub-THz Rectifying Detectors: FET vs. SBD

Content Provider Springer Nature Link
Author Sakh, M. Sizov, F. Golenkov, A.
Copyright Year 2013
Abstract The parameters (responsivity R and noise equivalent power (NEP)) of long channel unbiased (zero drain-source bias (V $_{DS}$ = 0)) silicon field effect transistors (FET) as THz/sub-THz detectors with account of some parasitics were considered. These parameters and their radiation frequency ν dependences are compared with those of contemporary Schottky barrier diode (SBD) THz/sub-THz detectors. To describe and compare the known experimental data for both of detectors similar models, taking into account the parasitics (some FET or SBD resistances and capacities), were used. It is shown that taking into account the parasitics and detector-antenna impedance matching one can describe Si FET detector parameters and estimate the performance limits of such detectors. The R and NEP radiation frequency ν dependences are similar for FET and SBD detectors and are proportional to ν $^{-2}$ or to ν $^{-4}$. The model used for SBD detectors describes well the known experimental data for optical NEP $^{opt}$ but for Si FET ones the sufficient scatter in experimental data is observed. The reason of it seems is mainly due to non-optimized technologies for FETs as detectors for THz/sub-THz radiation.
Starting Page 798
Ending Page 814
Page Count 17
File Format PDF
ISSN 18666892
Journal International Journal of Infrared and Millimeter Waves
Volume Number 34
Issue Number 12
e-ISSN 18666906
Language English
Publisher Springer US
Publisher Date 2013-09-08
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword THz/sub-THz FET and SBD detectors Parasitics and performance limits Electrical Engineering Electronics and Microelectronics, Instrumentation Optics and Electrodynamics
Content Type Text
Resource Type Article
Subject Instrumentation Condensed Matter Physics Electrical and Electronic Engineering Radiation
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