NDLI: 57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

Content Provider	Springer Nature Link
Author	Naidoo, D. Gunnlaugsson, H. P. Bharuth Ram, K. Naicker, V. V. Weyer, G. Sielemann, R. Mantovan, R. Fanciulli, M.
Copyright Year	2008
Abstract	Radioactive 57Mn+(T 1/2 = 1.5 min) ions have been implanted at the ISOLDE facility at CERN with 60 keV energy to fluences <1012/cm2 into p-type Si1 − x Ge x (x < 0.1) single crystals held at 300–600 K. The implantation and annealing processes result in the majority of the implanted Mn ions occupying substitutional lattice sites. In the subsequent 57Mn nuclear β − -decay to the 14.4 keV Mössbauer state of 57Fe (T 1/2 = 100 ns), an average recoil energy of 40 eV is imparted to the 57Fe daughter atoms which results in a large fraction being expelled into tetrahedral interstitial sites and the creation of a vacancy. The remainder occupies substitutional sites. This technique of recoil production of 57m FeI thus allows for the study of the diffusion characteristics of interstitial Fe. From the temperature dependent line broadening, the activation energies have been determined and decrease with increasing Ge concentration which contributes significantly to the increase of the jump frequency. A similar result has been obtained in n-type SiGe but there the values for the activation energies were much higher.
Starting Page	11
Ending Page	17
Page Count	7
File Format	PDF
ISSN	03043843
Journal	Hyperfine Interactions
Volume Number	188
Issue Number	1-3
e-ISSN	15729540
Language	English
Publisher	Springer Netherlands
Publisher Date	2008-10-07
Publisher Place	Dordrecht
Access Restriction	Subscribed
Subject Keyword	Mössbauer spectroscopy Diffusion Activation energies Surfaces and Interfaces, Thin Films Condensed Matter Atoms, Molecules, Clusters and Plasmas Nuclear Physics, Heavy Ions, Hadrons
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Atomic and Molecular Physics, and Optics Physical and Theoretical Chemistry Condensed Matter Physics

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