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| Content Provider | Springer Nature Link |
|---|---|
| Author | Achtziger, N. Grillenberger, J. Witthuhn, W. |
| Copyright Year | 1999 |
| Abstract | Basic electronic properties of semiconductors are determined by defects and impurities. Extremely small relative concentrations may have an effect, if the impurity in question gives rise to a localized electron state having an energy within the band gap of the semiconductor. Among the techniques available to characterize band gap states, the present paper focuses on Deep Level Transient Spectroscopy (DLTS). To derive a definite chemical identification of the band gap states detected, radioactive isotopes are used as a tracer. Characteristic concentration changes of band gap states (detected by repeated DLTS measurements during the elemental transmutation) clearly reveal the involvement of a radioisotope in the formation of a certain defect level. The key issues of a radiotracer experiment are the radioactive doping process and the interpretation of transmutation-induced phenomena. Critical aspects are illustrated on the basis of recent radiotracer-DLTS studies in the semiconductors silicon and silicon carbide. |
| Starting Page | 69 |
| Ending Page | 79 |
| Page Count | 11 |
| File Format | |
| ISSN | 03043843 |
| Journal | Hyperfine Interactions |
| Volume Number | 120 |
| Issue Number | 1-8 |
| e-ISSN | 15729540 |
| Language | English |
| Publisher | Kluwer Academic Publishers |
| Publisher Date | 1999-01-01 |
| Publisher Place | Dordrecht |
| Access Restriction | Subscribed |
| Subject Keyword | Surfaces and Interfaces, Thin Films Nuclear Physics, Heavy Ions, Hadrons Atoms, Molecules, Clusters and Plasmas Condensed Matter |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Atomic and Molecular Physics, and Optics Physical and Theoretical Chemistry Condensed Matter Physics |
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