NDLI: Rashba and Dresselhaus spin-orbit interaction in semiconductor quantum wells

Content Provider	Springer Nature Link
Author	Hao, Y. F.
Copyright Year	2012
Abstract	We theoretically investigate the Rashba and Dresselhaus spin-orbit interaction in AlAs/GaAs/Al0.3Ga0.7As/AlAs step-quantum wells. The ratio of Rashba and Dresselhaus spin splitting can be effectively manipulated by the well width and step width in the absence of electric field and magnetic field. When the well width of the step-quantum well is wider than 10 nm, the total spin splitting, which contains the contribution of interface as well as linear and cubic Dresselhaus terms, is always the greatest when the width of GaAs layer equals to about 2 nm. When the well width is wider than 2 nm, two different step widths can meet the SU(2) symmetry conditions, the smaller one of them results in maximum spin relaxation time. We also predict the application of the step-quantum well in spintronic devices.
Starting Page	1
Ending Page	7
Page Count	7
File Format	PDF
ISSN	14346028
Journal	The European Physical Journal B
Volume Number	85
Issue Number	2
e-ISSN	14346036
Language	English
Publisher	Springer-Verlag
Publisher Date	2012-02-29
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Mesoscopic and Nanoscale Systems Solid State Physics Statistical Physics, Dynamical Systems and Complexity Physics Condensed Matter Physics Fluid- and Aerodynamics
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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Rashba and Dresselhaus spin-orbit interaction in semiconductor quantum wells