NDLI: Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

Content Provider	Springer Nature Link
Author	Pankov, M. A. Aronzon, B. A. Rylkov, V. V. Davydov, A. B. Tugushev, V. V. Caprara, S. Likhachev, I. A. Pashaev, E. M. Chuev, M. A. Lähderanta, E. Vedeneev, A. S. Bugaev, A. S.
Copyright Year	2012
Abstract	The transport properties of GaAs/δ〈Mn〉/GaAs/In x Ga1−x As/GaAs structures containing an In x Ga1−x As (x ≈ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness d s = 2–5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence R xx (T) at the temperature ≈ 46 K, which is usually associated with the Curie temperature T C of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p H in the QW does not decrease below T C as one ordinary expects in similar systems. On the contrary, the dependence p H (T) experiences a minimum at T = 80–100 K depending on the spacer thickness, then increases at low temperatures more strongly when d s is smaller, and reaches a giant value p H = (1–2) × 1013 cm−2. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high p H value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.
Starting Page	1
Ending Page	11
Page Count	11
File Format	PDF
ISSN	14346028
Journal	The European Physical Journal B
Volume Number	85
Issue Number	6
e-ISSN	14346036
Language	English
Publisher	Springer-Verlag
Publisher Date	2012-06-20
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Solid State and Materials Statistical Physics, Dynamical Systems and Complexity Physics Condensed Matter Physics Solid State Physics Fluid- and Aerodynamics
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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