NDLI: Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Content Provider	Springer Nature Link
Author	Chen, Jun Rong Wu, Yung Chi Lu, Tien Chang Kuo, Hao Chung Kuo, Yen Kuang Wang, Shing Chung
Copyright Year	2009
Abstract	Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.
Starting Page	375
Ending Page	382
Page Count	8
File Format	PDF
ISSN	13406000
Journal	Optical Review
Volume Number	16
Issue Number	3
e-ISSN	13499432
Language	English
Publisher	Optical Society of Japan
Publisher Date	2010-06-25
Publisher Place	Japan
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	semiconductor lasers optical properties III–V semiconductors numerical simulation Physics
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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