NDLI: Electrooptic effect of water in electric double layer at interface of GaN electrode

Content Provider	Springer Nature Link
Author	Kanemaru, Hirori saka, Yugo Hirako, Akira Ohkawa, Kazuhiro Kobayashi, Takayoshi Tokunaga, Eiji
Copyright Year	2010
Abstract	We determined the Pockels constant of water in the electric double layer (EDL) at the GaN electrode interface. For a positive (negative) bias, the difference transmittance showed a blue (red) shift in the interference fringes in the visible. This was caused by a negative (positive) refractive index change both in the EDL of water and in the space charge layer (SCL) of the GaN. The latter was associated with the blue shift in the absorption edge in the UV due to the band population effect in the GaN. The voltage drops took place within the interfacial layer at a ratio of about 3: 1 for the SCL vs EDL at the modulation frequency of f = 20 Hz, estimated from the frequency dependence of the impedance. The Pockels constant of water in the EDL was determined to be r 13 = 0:63 × 100 pm/V for the GaN electrodes. This is three times smaller than that at the surface of the indium tin oxide (ITO) electrode.
Starting Page	352
Ending Page	356
Page Count	5
File Format	PDF
ISSN	13406000
Journal	Optical Review
Volume Number	17
Issue Number	3
e-ISSN	13499432
Language	English
Publisher	Optical Society of Japan
Publisher Date	2010-06-05
Publisher Place	Japan
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Pockels effect electric double layer water electroabsorption spectroscopy GaN liquid-solid interface space charge layer refractive index optical nonlinearity band population effect Physics
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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