NDLI: Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

Content Provider	Springer Nature Link
Author	Valov, I. Staikov, G.
Copyright Year	2012
Abstract	The impact of the electrochemical nucleation on the switching kinetics in many nanoscaled redox-based resistive switching memories is critically discussed. In the case of the atomic switch, the system is site invariant and the nucleation process is strictly localized below the STM tip. Using RbAg4I5 solid electrolyte, nucleation was found to be rate limiting. The electrochemical metallization memory cells (gapless type atomic switch) operate at conditions closer to the conventional nucleation. They introduce additional difficulties for interpretation of the experimental results due to formation of hillocks, of surface oxide barrier films, induction of strain, and the influence of the high electric field. In valence change memories, the nucleation seems to be less important because of the higher applied voltages. The results are discussed in the context of the atomistic theory of electrochemical nucleation. We believe that re-analysis of the experimental data for many systems will reveal that the nucleation is limiting the switching time.
Starting Page	365
Ending Page	371
Page Count	7
File Format	PDF
ISSN	14328488
Journal	Journal of Solid State Electrochemistry
Volume Number	17
Issue Number	2
e-ISSN	14330768
Language	English
Publisher	Springer-Verlag
Publisher Date	2012-10-11
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electrochemical nucleation Atomic switch ECM VCM ReRAM RRAM memory Physical Chemistry Electrochemistry Energy Storage Characterization and Evaluation of Materials Analytical Chemistry Condensed Matter Physics
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science Electrical and Electronic Engineering Electrochemistry

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