NDLI: Bonding of Cu-based high aspect ratio microscale structures with Sn intermediate layers

Content Provider	Springer Nature Link
Author	Mei, Fanghua Chen, Ke Lu, B. Meng, Wen Jin
Copyright Year	2009
Abstract	Simple and effective protocols for bonding Cu-based high-aspect-ratio microscale structures (HARMSs) are essential for assembly of Cu-based microdevices. In this paper, Cu-to-Cu bonding with thin intermediate layers of elemental Sn is explored. Bonding quality is assessed through quantitative evaluation of tensile bond strength as a function of bonding parameters such as temperature and applied pressure. Structural examination of the Cu/Sn/Cu interface region is accomplished by combining focused ion beam sectioning and imaging with ion-induced secondary electrons. Successful bonding of Cu-based HARMSs to flat Cu plates with Sn intermediate layers is demonstrated, as well as assembly of all-Cu microfluidic prototypes.
Starting Page	1111
Ending Page	1118
Page Count	8
File Format	PDF
ISSN	09467076
Journal	Microsystem Technologies
Volume Number	15
Issue Number	7
e-ISSN	14321858
Language	English
Publisher	Springer-Verlag
Publisher Date	2009-04-26
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electronics and Microelectronics, Instrumentation Mechanical Engineering Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Hardware and Architecture

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Bonding of Cu-based high aspect ratio microscale structures with Sn intermediate layers