NDLI: Characterisation of silicon carbide JFETs with respect to microsystems for high temperature applications

Content Provider	Springer Nature Link
Author	Zappe, S. Leone, M. Yang, F. Obermeier, E.
Copyright Year	1997
Abstract	In this work first commercially available SiC-transistor prototypes were tested with regard to their applicability in high temperature electronic circuits for sensor signal conditioning.The influence of the temperature on the device behaviour (drain-saturation current, gate leakage current, I–V-characteristics, long-term effects) was investigated. The devices showed reliable operation up to 450 °C. The maximum forward transconductance g m and the short circuit drain source current I DSS decreased to approximately 30% of the room temperature values. Also, a slight increase of the pinch-off voltage V p was observed. The gate leakage current I GSS rose with temperature, staying below 1 μA at 450 °C. A pre-ageing study was carried out to verify changes in the device characteristics with time. The devices were exposed to a 270 °C environment and it was observed that the DC parameters tend to stabilise after about 100 h.From the I–V-characteristics the SPICE parameters were extracted for a series of temperatures, allowing the design and optimisation of amplifier gain stages. The SPICE device simulation results are in good agreement with the measured characteristics.
Starting Page	134
Ending Page	138
Page Count	5
File Format	PDF
ISSN	09467076
Journal	Microsystem Technologies
Volume Number	3
Issue Number	3
e-ISSN	14321858
Language	English
Publisher	Springer-Verlag
Publisher Date	1997-05-16
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Hardware and Architecture

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