NDLI: Modeling interface trapping effect in organic field-effect transistor under illumination

Content Provider	Springer Nature Link
Author	Kwok, H. L.
Copyright Year	2008
Abstract	Organic field-effect transistors (OFETs) have received significant attention recently because of the potential application in low-cost flexible electronics. The physics behind their operation are relatively complex and require careful consideration particularly with respect to the effect of charge trapping at the insulator–semiconductor interface and field effect in a region with a thickness of a few molecular layers. Recent studies have shown that the so-called “onset” voltage (V onset) in the rubrene OFET can vary significantly depending on past illumination and bias history. It is therefore important to define the role of the interface trap states in more concrete terms and show how they may affect device performance. In this work, we propose an equivalent-circuit model for the OFET to include mechanism(s) linked to trapping. This includes the existence of a light-sensitive “resistor” controlling charge flow into/out of the interface trap states. Based on the proposed equivalent-circuit model, an analytical expression of V onset is derived showing how it can depend on gate bias and illumination. Using data from the literature, we analyzed the I–V characteristics of a rubrene OFET after pulsed illumination and a tetracene OFET during steady-state illumination.
Ending Page	282
Page Count	4
Starting Page	279
File Format	PDF
ISSN	09462171
e-ISSN	14320649
Journal	Applied Physics B
Issue Number	2
Volume Number	94
Language	English
Publisher	Springer-Verlag
Publisher Date	2008-12-10
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Engineering Optical Spectroscopy, Ultrafast Optics Laser Technology and Physics, Photonics Physical Chemistry Electromagnetism, Optics and Lasers Quantum Optics, Quantum Electronics, Nonlinear Optics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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