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| Content Provider | Springer Nature Link |
|---|---|
| Author | Kwok, H. L. Li, W. C. |
| Copyright Year | 2011 |
| Abstract | Mutli-layer light-emitting organic field-effect transistors (OLETs) are shown to have high internal quantum efficiencies approaching 5%, a value much higher than the conventional organic light-emitting diodes (OLEDs). This work re-examines some data reported in the literature on OLETs and put forward a model that explains the charge transport and light emission process. Our analyses suggest that the reported improvements on the internal quantum efficiency of OLETs are directly linked to charge recombination and light emission and is independent of the drain-source current as well as the gate-induced charge density in the accumulation layer. Such independence allows the internal quantum efficiency to increase as the drain-source current decreases. The process differs from the charge transport in OLEDs where recombination and light emission are directly tied to the injected space charge densities thereby preventing the internal quantum efficiency of OLEDs to increase even when the device current is lowered. |
| Starting Page | 425 |
| Ending Page | 428 |
| Page Count | 4 |
| File Format | |
| ISSN | 09462171 |
| Journal | Applied Physics B |
| Volume Number | 106 |
| Issue Number | 2 |
| e-ISSN | 14320649 |
| Language | English |
| Publisher | Springer-Verlag |
| Publisher Date | 2011-10-12 |
| Publisher Place | Berlin, Heidelberg |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Multi-layered structure Field-effect operation Recombination current and light emission Internal quantum efficiency Engineering Physical Chemistry Optics, Optoelectronics, Plasmonics and Optical Devices Laser Technology, Photonics Quantum Optics Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
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