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Article
Article
| Content Provider | Springer Nature Link |
|---|---|
| Author | Zhu, G. Y. Li, J. T. Shi, Z. L. Lin, Y. Chen, G. F. Ding, T. Tian, Z. S. Xu, C. X. |
| Copyright Year | 2012 |
| Abstract | Based on the easily controllable radio frequency magnetron sputtering, n-ZnO and i-MgO thin films were fabricated on p+-GaN substrate to construct heterojunctional light-emitting diodes for ultraviolet emission from the near band edge exciton recombination of ZnO. Effects of the insulator MgO layer on the electroluminescent performance of the n-ZnO/i-MgO/p+-GaN light-emitting diodes have been investigated. It was found that the light-emitting diode presented stronger near band-edge emission with blue shift emission peak under the lower working current when i-MgO layer was inserted. The fabrication process, characteristics and the mechanism were discussed in detail. |
| Starting Page | 195 |
| Ending Page | 199 |
| Page Count | 5 |
| File Format | |
| ISSN | 09462171 |
| Journal | Applied Physics B |
| Volume Number | 109 |
| Issue Number | 2 |
| e-ISSN | 14320649 |
| Language | English |
| Publisher | Springer-Verlag |
| Publisher Date | 2012-09-15 |
| Publisher Place | Berlin, Heidelberg |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Engineering Physics Laser Technology, Photonics Optics, Optoelectronics, Plasmonics and Optical Devices Quantum Optics Physical Chemistry |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
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