NDLI: Si homojunction structured near-infrared laser based on a phonon-assisted process

Content Provider	Springer Nature Link
Author	Kawazoe, T. Ohtsu, M. Akahane, K. Yamamoto, N.
Copyright Year	2012
Abstract	We fabricated several near-infrared Si laser devices (wavelength ∼1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm2, 8:1, 50 μW, and 1 %, respectively.
Starting Page	659
Ending Page	663
Page Count	5
File Format	PDF
ISSN	09462171
Journal	Applied Physics B
Volume Number	107
Issue Number	3
e-ISSN	14320649
Language	English
Publisher	Springer-Verlag
Publisher Date	2012-05-25
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Physical Chemistry Quantum Optics Laser Technology, Photonics Optics, Optoelectronics, Plasmonics and Optical Devices Physics Engineering
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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