NDLI: Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation

Content Provider	Springer Nature Link
Author	Yu, W.D. Zhang, J.H. Wang, X. Li, X.M. Gao, X.D.
Copyright Year	2004
Abstract	To enhance the field emission of carbon nanotube (CNT) films, a novel technique that combines hydrogen-ion implantation used in the silicon-on-insulation smart-cut process and plasma-enhanced chemical vapor deposition was developed to produce an aligned porous carbon nanotube (AP-CNT) film on a Si substrate. All steps in the AP-CNT synthesis were carried out in vacuum, which reduced possible contamination. The morphology and the field-emission properties of the CNT films were investigated and results show that CNT holes with a diameter of 5 μm and a depth of 30 μm were produced in the AP-CNT film. The alignment of the CNTs is visibly improved. Due to the implantation treatment, the turn-on field of the CNT films decreased from 1.5 to 0.8 V/μm, and the emission-current (and dot) density obviously increased. This field-emission improvement may mainly arise from the holes formed in the AP-CNT films. The edges of these holes not only intensified the electron emission but also increase the emission site density of the CNT films.
Starting Page	169
Ending Page	172
Page Count	4
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	81
Issue Number	1
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2004-06-30
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Nanotechnology Characterization and Evaluation Materials Surfaces and Interfaces, Thin Films Condensed Matter Operating Procedures, Materials Treatment
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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