NDLI: Engineering Cubic Silicon Carbide Surfaces Properties Using Hydrogen: Metallization versus Passivation

Content Provider	Springer Nature Link
Author	Soukiassian, P.
Copyright Year	2005
Abstract	Atomic (H) and molecular (H2) hydrogen interaction onto the Si-rich β-SiC(100) 3×2 and Si-terminated β-SiC(100) c(4×2) surface reconstruction is investigatedabytom-resolved scanning tunneling microscopy and spectroscopy, core level and valence band photoemission spectroscopies, and infrared absorption spectroscopy. In this review, the most recent investigations are presented and discussed in the framework of existing models including the following issues: i) molecular H2 interaction with Si rich 3×2 and ii) Si-terminated c(4×2) surface reconstructions, and iii) atomic H-induced β-SiC(100) 3×2 surface metallization. While the β-SiC(100)3×2 surface is totally inert to molecular hydrogen, the β-SiC(100) c(4×2) is instead very reactive with sticking probabilities eight orders of magnitude above those of silicon surfaces, leading to a 2×1 surface transformation and allowing to built Si atomic lines on a H-passivated β-SiC(100) surface. Contrary to its well-known role in semiconductor surface passivation, atomic H is found to metallize the β-SiC(100) 3×2 surface, which is the first example of H-induced semiconductor surface metallization. Interestingly, such a metallization is not removed by oxygen and also takes place on a pre-oxidized surface. Such an unexpected and unprecedented behavior results from the competition between H termination of top surface dangling bonds and H-induced asymmetric attack of the Si-dimers located below the surface (3rd plane), leading to charge transfer and to metallization.
Starting Page	421
Ending Page	430
Page Count	10
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	82
Issue Number	3
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2005-11-04
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Operating Procedures, Materials Treatment Surfaces and Interfaces, Thin Films Characterization and Evaluation of Materials Nanotechnology Optical and Electronic Materials Condensed Matter
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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