NDLI: Influence of the illumination on the subband structure and occupation in Al x Ga1−x N/GaN heterostructures

Content Provider	Springer Nature Link
Author	Lin, Tie Qin, Zhi Xin Shang, Li Yan Yin, Chun Ming Han, Kui Chu, Jun Hao Zhou, Wen Zheng Tang, Ning Shen, Bo He, Xiao Wei Yang, Zhi Jian Zhang, Guo Yi
Copyright Year	2009
Abstract	The subband structure and occupation in the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.
Ending Page	957
Page Count	5
Starting Page	953
File Format	PDF
ISSN	09478396
e-ISSN	14320630
Journal	Applied Physics A
Issue Number	4
Volume Number	96
Language	English
Publisher	Springer-Verlag
Publisher Date	2009-02-04
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Operating Procedures, Materials Treatment Optical and Electronic Materials Characterization and Evaluation of Materials Condensed Matter Surfaces and Interfaces, Thin Films Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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