NDLI: Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

Content Provider	Springer Nature Link
Author	Kumar, Maj Sekiguchi, Hiroto Okada, Hiroshi Wakahara, Akihiro
Copyright Year	2013
Abstract	A report on the fabrication and characterization of high performance conventional and ring-shaped AlGaN/GaN Schottky barrier diode on Si is presented. The resulting device exhibited low leakage current, which led to a detectivity performance of 3.48×1013 and 1.76×1013 cm Hz1/2 W−1, respectively, for both conventional and ring-shaped Schottky diode. The differential resistances of both devices were obtained at approximately 1.37×1012 and 1.41×1013 Ω, respectively. The zero bias peak responsivities of conventional and ring-shaped Schottky diodes were estimated to be 3.18 and 2.08 A cm−2/W, respectively. The typical UV to visible rejection ratio was observed over three orders of magnitude at zero bias. The C–V measurements was used to calculate and analyze the polarization sheet charge density of the AlGaN barrier layer by using self-consistently solving Schrodinger’s and Poisson’s equations. It is demonstrated that the ring shape of the Schottky barrier has higher polarization sheet charge density, which has the consequence that the Schottky shape has influence on the strain of the AlGaN barrier layer.
Starting Page	847
Ending Page	853
Page Count	7
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	112
Issue Number	4
e-ISSN	14320630
Language	English
Publisher	Springer Berlin Heidelberg
Publisher Date	2013-05-28
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Condensed Matter Physics Optical and Electronic Materials Nanotechnology Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Operating Procedures, Materials Treatment
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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