NDLI: Oxygen diffusion barriers using a new sacrificial design concept for future high-density memory devices

Content Provider	Springer Nature Link
Author	Yoon, D.S. Roh, J.S.
Copyright Year	2003
Abstract	We emphasize the importance of the new design concept for diffusion barriers in high-density memory capacitors. RuTiN and RuTiO films are proposed as sacrificial oxygen diffusion barriers. They showed much lower sheet resistance up to 800 °C than various barriers including binary and ternary nitrides, reported by others. The contact resistance for both the Pt/RuTiN/TiSix/n++poly-plug/n+channel layer/Si and the Pt/RuTiO/RuTiN/TiSix/n++poly-plug/n+channel layer/Si contact structures, the most important electrical parameter for the diffusion barrier in the bottom-electrode structure of capacitors, exhibited values as low as 5 kΩ, even after annealing up to 750 °C. When each RuTiN and TiN film is inserted as a glue layer between the bottom electrode Pt layer in the CVD–BST simple stack-type structure, the thermal stability of the RuTiN glue layer is observed to be 150 °C higher than that of the TiN glue layer. Moreover, the capacitance of the PVD–BST simple stack-type structure with a TiN glue layer initially degrades after annealing at 500 °C, and thereafter failed completely. In the case of RuTiN and the RuTiO/RuTiN glue layers, however, the capacitance continuously increased up to 550 °C. These new experimental results accommodate the introduction of the sacrificial design concept of diffusion barriers against oxygen in high-density memory capacitors.
Starting Page	1067
Ending Page	1077
Page Count	11
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	76
Issue Number	7
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2003-05-01
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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