NDLI: Electrical properties of Sr3Bi4Ti6O21 thin films

Content Provider	Springer Nature Link
Author	Zhang, S.T. Yang, B. Zhang, X.J. Chen, Y.F. Liu, Z.G. Ming, N.B. Pan, X.Q.
Copyright Year	2002
Abstract	Highly c-axis-oriented Sr3Bi4Ti6O21 (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO3 (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (Pr) and coercive field (Ec) values were 4.1 μC/cm2 and 75 kV/cm respectively. The films showed little fatigue after 2.22×109 switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM).
Starting Page	645
Ending Page	647
Page Count	3
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	77
Issue Number	5
e-ISSN	14320630
Language	English
Publisher	Springer Berlin Heidelberg
Publisher Date	2003-10-01
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Condensed Matter Physics Optical and Electronic Materials Nanotechnology Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Operating Procedures, Materials Treatment
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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