NDLI: Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Content Provider	Springer Nature Link
Author	Nie, H.B. Xu, S.Y. Wang, S.J. You, L.P. Yang, Z. Ong, C.K. Li, J. Liew, T.Y.F.
Copyright Year	2000
Abstract	TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N2 processing pressure with varied N2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta2N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at 25% N2 partial pressure, which may be suitable for the interlayer in [FeN/TaN]n multilayers.
Starting Page	229
Ending Page	236
Page Count	8
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	73
Issue Number	2
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2001-08-01
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering

Properties of Al-doped copper nitride films prepared by reactive magnetron sputtering

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Influence of nitrogen flow rates on materials properties of CrN$_{ x }$ films grown by reactive magnetron sputtering

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

Biomedical properties of tantalum nitride films synthesized by reactive magnetron sputtering

The characterization of Cu-doped ZnO thin films prepared by using radio-frequency reactive magnetron sputtering

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Similar Documents

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering

Properties of Al-doped copper nitride films prepared by reactive magnetron sputtering

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Influence of nitrogen flow rates on materials properties of CrN$_{ x }$ films grown by reactive magnetron sputtering

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

Biomedical properties of tantalum nitride films synthesized by reactive magnetron sputtering

The characterization of Cu-doped ZnO thin films prepared by using radio-frequency reactive magnetron sputtering

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering