NDLI: Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle

Content Provider	Springer Nature Link
Author	Camiola, Vito Dario Mascali, Giovanni Roma, Vittorio
Copyright Year	2011
Abstract	A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors formulated starting from the moment system derived from the Schrödinger–Poisson–Boltzmann equations. The system is closed on the basis of the maximum entropy principle and includes scattering of electrons with acoustic and non-polar optical phonons. The proposed expression of the entropy combines quantum effects and semiclassical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schrödinger–Poisson subsystem. The simulations show that the model is able to capture the relevant confining and transport features and assess the robustness of the numerical scheme.
Starting Page	417
Ending Page	436
Page Count	20
File Format	PDF
ISSN	09351175
Journal	Continuum Mechanics and Thermodynamics
Volume Number	24
Issue Number	4-6
e-ISSN	14320959
Language	English
Publisher	Springer-Verlag
Publisher Date	2011-11-29
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Quantum transport Semiconductors Hydrodynamical models Theoretical and Applied Mechanics Structural Materials Classical Continuum Physics Engineering Thermodynamics, Heat and Mass Transfer
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Mechanics of Materials Materials Science

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Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle