NDLI: A Novel Modeling Methodology for Memristive Systems Using Homotopy Perturbation Methods

Content Provider	Springer Nature Link
Author	Hernández Mejía, Carlos Sarmiento Reyes, Arturo Vázquez Leal, Héctor
Copyright Year	2016
Abstract	The physical conception of the memristor by the Hewlett-Packard Labs has opened the possibility of combining this new fundamental circuit element with traditional devices in order to carried out novel applications. An important step for incorporating the memristor into the computer-aided design tools is to find an expression that represents the behavior of the device. In this paper, a novel modeling methodology for memristive systems using homotopy perturbation methods is introduced. This methodology is capable of generating a semi-symbolical expression that represents the memristive behavior of the device. The new memristor model is characterized in order to determinate the impact of the variables on the memristive behavior and establishes the range of compliance using the principal fingerprints of the memristor. Besides, the novel memristor model is depicted by two cases of study. Finally, the advantages of the memristor model are presented and discussed.
Starting Page	947
Ending Page	968
Page Count	22
File Format	PDF
ISSN	0278081X
Journal	Circuits, Systems, and Signal Processing
Volume Number	36
Issue Number	3
e-ISSN	15315878
Language	English
Publisher	Springer US
Publisher Date	2016-06-08
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Memristor Memristive systems Homotopy perturbation method Memristor model Mathematical modeling Circuits and Systems Electrical Engineering Signal,Image and Speech Processing Electronics and Microelectronics, Instrumentation
Content Type	Text
Resource Type	Article
Subject	Applied Mathematics Signal Processing

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