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Carrier Lifetime Enhancement in Free-standing, Lightly Doped, N-type 4H-SiC Substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chowdhury, Supria Hitchcock, Collin W. Dahal, Rajendra P. Bhat, Ishwara B. Chow, T. Paul |
| Copyright Year | 2016 |
| Abstract | Lightly doped, free-standing 4H-SiC substrates can be utilized for the fabrication of ultra-high voltage n-channel IGBTs [1], as well as other derivative devices such as bi-directional IGBTs [2]. A long carrier recombination lifetime is desirable to ensure adequate conductivity modulation to achieve a low forward voltage drop (VF) in such UHV bipolar devices. Till date, two processes have been successfully used to eliminate lifetime killing deep levels (Z1/2 and EH6/7 centers) in n-type 4H-SiC and thereby increase the carrier recombination lifetime. These are high temperature thermal oxidation [3] or carbon implantation and annealing [4]. In this paper, we present a comparative study of carrier lifetime enhancement in free-standing 4H-SiC substrates, by using both high temperature oxidation and carbon implantation techniques. 4H-SiC wafers with a lightly doped N-type epitaxial layer (thickness = 180 μm, doping = 2.5×10 14 cm -3 ) grown on 4 o off-axis N + substrates were obtained from a commercial vendor. The substrate was subsequently removed to yield lightly doped, free-standing substrates. In one set of samples, high temperature dry oxidation was carried out at 1400 o C for 48 hours. In a second set of samples, carbon was implanted on both sides of the wafer at 600 o C (depth = 0.25 μm, dose = 10 14 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ecscrm2016.org/wp-content/uploads/Abstracts/Characterisation/C2776.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
