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Tight-binding calculations of Ge-nanowire bandstructures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bescond, Marc Cavassilas, Nicolas Néhari, K. Lannoo, Michel |
| Copyright Year | 2007 |
| Abstract | The subband structure of square Ge 〈100〉-oriented nanowires using a sp3 tight-binding model is studied. Starting from the bulk Ge structure, we describe the bands obtained in nanowires before showing the dependence of the band-gap energy and the effective masses as a function of the wire thickness. For this orientation, the Ge nanowire properties are found to be very sensitive to transverse confinement. In particular the band-gap goes very close to the one of the silicon nanowire, reducing then the impact of the band-to-band tunneling and making it more suitable for nanoelectrics applications. |
| Starting Page | 341 |
| Ending Page | 344 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10825-006-0137-z |
| Volume Number | 6 |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/iwce/iwce11_2006/pp355-356.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s10825-006-0137-z |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
