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In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Martin-Gonthier, P. Goiffon, Vincent Magnan, Pierre |
| Copyright Year | 2012 |
| Abstract | This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process. The noise measurements are focused on the random telegraph signal (RTS) noise due to the in-pixel source follower transistor of the sensor readout chain inducing noisy pixels. Results show no significant RTS noise degradation up to 300 krad of TID. Beyond this TID step, a limited RTS noise degradation is observed, and for the 2.19-Mrad step, an additional increase of total noise, including thermal, 1/f, and RTS noises, is noted. Noisy pixels have been studied for high TIDs, and three cases have been observed: 1) no change on RTS behavior; 2) creation of RTS behavior; and 3) modifications of RTS behavior. |
| Starting Page | 1686 |
| Ending Page | 1692 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TED.2012.2189115 |
| Volume Number | 59 |
| Alternate Webpage(s) | http://oatao.univ-toulouse.fr/5494/1/Martin_Gonthier_5494.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/TED.2012.2189115 |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
