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Reactive Ion Etching of SiC Using C 2 F 6 / O 2 Inductively Coupled Plasma
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kong, S. Choi, Hee-June Lee, Jung Lym |
| Abstract | Silicon carbide is being actively investigated as a substrate material for the high-power, high-temperature, and high-frequency electronic devices. Reactive ion etching (RIE) techniques have been studied to provide a reliable patterning method for the SiC devices, as the simple wet etch techniques are not yet available due to the chemical stability of this material. The high-density plasma using the fluorine-containing gas mixtures was recently studied to improve problems of the conventional RIE technique, such as the micromasking surface residue formation and the low etch rate. Inductively coupled plasma (ICP) RIE is mainly studied, as it is simple to operate, easy to obtain large-size etch uniformity, and capable of independent control of the plasma density and the sample bias. Detailed results on the ICP-RIE of SiC single crystals have been previously reported, using the CF4, SF6, NF3, and their mixtures with oxygen, argon, hydrogen, and helium. In this work, etch characteristics of SiC using the C2F6/O2 inductively coupled plasma were investigated. The C2F6 gas, with lower PFC emission than the CF4 and the SF6, is one of the widely used gases for the Si etching and for the chemical vapor deposition chamber cleaning. The etch rate, the mesa profile, and the surface morphology were observed as a function of various process variables, using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface damage and contamination were also studied using Auger electron spectroscopy (AES), Schottky barrier measurement by I–V test, and transmission electron microscopy (TEM). |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/s11664-002-0208-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
