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A 72 . 2 Mbit / S Lc-based Power Amplifier in 65 Nm Cmos for 2 . 4 Ghz 802 . 11 N Wlan
| Content Provider | Semantic Scholar |
|---|---|
| Author | Johansson |
| Copyright Year | 2008 |
| Abstract | This paper describes the design and evaluation of a power amplifier (PA) for WLAN 802.11n in 65nm CMOS technology. The PA utilizes 3.3V thick-gate oxide (5.2nm) transistors and a two-stage differential configuration with two integrated inductors for input and interstage matching. For a 72.2Mbit/s, 64-QAM 802.11n OFDM signal at an average and peak output power of 9.4dBm and 17.4dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 14dBm. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.jonasfritzin.com/pdf/publ/mixdes2008_jonasfritzin.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
