Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy.

Content Provider	Semantic Scholar
Author	Hermann, Peter Z. Hecker, Michael Chumakov, Dmytro Weisheit, M. Rinderknecht, Jochen Shelaev, Artem Dorozhkin, Pavel S.
Copyright Year	2011
Abstract	The spatial resolution and high sensitivity of tip-enhanced Raman spectroscopy allows the characterization of surface features on a nano-scale. This technique is used to visualize silicon-based structures, which are similar in width to the transistor channels in present leading-edge CMOS devices. The reduction of the intensive far-field background signal is crucial for detecting the weak near-field contributions and requires beside a careful alignment of laser polarization and tip axis also the consideration of the crystalline sample orientation. Despite the chemical identity of the investigated sample surface, the structures can be visualized by the shift of the Raman peak positions due to the patterning induced change of the stress distribution within lines and substrate layer. From the measured peak positions the intrinsic stress within the lines is calculated and compared with results obtained by finite element modeling. The results demonstrate the capability of the tip-enhanced Raman technique for strain analysis on a sub-50nm scale.
File Format	PDF HTM / HTML
DOI	10.1016/j.ultramic.2011.08.009
PubMed reference number	21963780
Journal	Medline
Volume Number	111
Issue Number	11
Alternate Webpage(s)	https://www.ntmdt-si.com/data/media/files/products/ntegra/spectra/pub/hermann.pdf
Alternate Webpage(s)	https://doi.org/10.1016/j.ultramic.2011.08.009
Journal	Ultramicroscopy
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article