NDLI: Electric field-induced resistance switching in „ Bi 2 O 3 ... 0 . 7 „ Y 2 O 3 ... 0 . 3 films

Content Provider	Semantic Scholar
Author	Shi, Linfang Shang, Da Shan Sun, Junkang Shen, Bao Gen
Copyright Year	2009
Abstract	Single-phase Bi2O3 0.7 Y2O3 0.3 BYO films are obtained by pulse laser deposition under the temperatures from 300 to 500 °C and the oxygen pressure of 90 Pa. Electric field-induced resistance switching is observed in the Ag/BYO/Pt structure. Postannealing in 750 °C improves the repeatability of the resistance switching and narrows the distribution of the set and reset voltages triggering the resistance switching. A linear variation of reset current with resistance is obtained for the Ag/BYO/Pt systems, either as-prepared or postannealed, despite the great dispersion of these two quantities. A reduction in the activation energy, from 0.63 to 0.33 eV, for the migration of oxygen vacancies is observed after the forming process. Possible mechanisms are discussed. © 2009 American Institute of Physics. DOI: 10.1063/1.3106660
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://m03.iphy.ac.cn/Paper/2009/JAP105(2009)083714-M03.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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