NDLI: GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

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GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Content Provider	Semantic Scholar
Author	Mohseni, Parsian Katal Kim, Seung Hyun Zhao, Xiang Balasundaram, Karthik Kim, Jeong Dong Rogers, John A. Coleman, J. J. Li, Xiuling
Copyright Year	2013
Abstract	We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.
Starting Page	064909
Ending Page	064909
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.4817424
Alternate Webpage(s)	http://mocvd.ece.illinois.edu/publications/pubs/JAP_Parsian_GaAsLED_byMacEtch_2013.pdf
Alternate Webpage(s)	http://mocvd.ece.illinois.edu/research/pubs/JAP_Parsian_GaAsLED_byMacEtch_2013.pdf
Alternate Webpage(s)	http://rogersgroup.northwestern.edu/files/2013/gaaspillarsjap.pdf
Alternate Webpage(s)	http://rogers.matse.illinois.edu/files/2013/gaaspillarsjap.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.4817424
Volume Number	114
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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