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Crystallization and ferroelectric properties of the amorphous precursor films of Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) blended with Pb(Zr,Ti)O3
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Wan-Gyu Park, Byung Eun Park, Kyung Eun |
| Copyright Year | 2012 |
| Abstract | Precursor films based on poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and P(VDF-TrFE) blended with Pb(Zr,Ti)O3 (PZT) were spin-coated on Si substrates and subsequently annealed at 150, 170, or 190°C. X-ray diffraction studies showed that the crystallization from the amorphous precursor films to the £ phase starts at higher annealing temperatures without involving the formation of other polymorphs when the P(VDF-TrFE) is blended with PZT, and the PZT content increases, resulting in an amorphous phase and/or crystalline £ phase. Nevertheless, a larger memory window width and much higher accumulation capacitance are induced by the blended PZT within the low operating voltage ranges from ¹0.5 to 2.0V and from ¹2.0 to 6.0V for 76.7 and 96.7wt% PZT blending, respectively. Furthermore, these improvements in the hysteretic characteristics in the capacitancevoltage measurements are also directly correlated with the degree of P(VDF-TrFE) crystallization and the presence of PZT. This approach enables viable routes toward the commercialization of nonvolatile ferroelectric memory devices and their market extension to potential applications as functional devices. |
| Starting Page | 224 |
| Ending Page | 228 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.2109/jcersj2.120.224 |
| Alternate Webpage(s) | https://www.jstage.jst.go.jp/article/jcersj2/120/1402/120_JCSJ-P12006/_pdf/-char/en |
| Alternate Webpage(s) | https://doi.org/10.2109/jcersj2.120.224 |
| Volume Number | 120 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
